Molecular beam epitaxy of III-V compound semiconductors.

Chapter 3 . Gas Source Molecular Beam Epitaxy of Compound Semiconductors

This research program utilizes the chemical beam epitaxy laboratory and emphasizes the epitaxial growth of a wide variety of compound semiconductors (both Il-VI and Ill-V), as well as multilayered structures composed of II-VI/II-VI, II-VI/III-V and Ill-V/III-V heterostructures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Il-VI dedicated and Ill-V dedica...

Chapter 3 . Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), ...

Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.

Kinetic Monte Carlo simulations on the basis of rates derived from density-functional calculations are used to investigate the atomic processes in molecular beam epitaxy of GaAs. This approach puts us in a position to describe island nucleation and growth in all relevant atomistic detail by bridging the gap in length and time scales between the mesoscopic scale of growth morphology and the atom...

Molecular Beam Epitaxy of Ii-vi Compound Waveguides

IConllnv on r...r.. •Idm II n.c....ry and Idtnllly by block numb.r) Thin films ot ZnSe, ZnTe, Zn(SeTe), Cd(SeTe) and CdTe were grown on CdS, CdSe, CaF,, and sapphire substrates by evaporation of the elements under ultra-high vacuum. Substrate chemical polishing techniques were developed:. Elemental and compound evaporation and deposition rates were measured by mass spectrometer, film thickness,...

Chemical Beam Epitaxy of Iii-v Semiconductor Heterostructures